PART |
Description |
Maker |
MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 250 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
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ON Semiconductor Motorola, Inc.
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MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
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MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 1000 VOLTS
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ON Semiconductor
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MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
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ETC Motorola, Inc ON Semiconductor
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MTP75N06HD MTP75N06HD_D ON2646 |
From old datasheet system TMOS POWER FET 75 AMPERES 50 VOLTS TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS
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ON Semiconductor Motorola, Inc
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MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
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MOTOROLA[Motorola, Inc] Motorola, Inc.
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